MT45W2MW16BGB-701 IT 数据手册
32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Features
Async/Page/Burst
CellularRAM® 1.0 Memory
MT45W2MW16BGB
Features
Figure 1:
• Single device supports asynchronous, page, and
burst operations
• Random access time: 70ns
• VCC, VCCQ voltages
– 1.7–1.95V VCC
– 1.7–3.6V VCCQ
• Page mode read access
– 16-word page size
– Interpage read access: 70ns
– Intrapage read access: 20ns
• Burst mode write access: continuous burst
• Burst mode read access
– 4, 8, or 16 words or continuous burst
– MAX clock rate: 104 MHz (tCLK = 9.62ns)
– Burst initial latency: 38.5ns (4 clocks) at 104 MHz
– tACLK: 7ns at 104 MHz
• Low power consumption
– Asynchronous read:
MT45W2MW16BGB-701 IT 价格&库存
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