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MT45W2MW16BGB-701 IT

MT45W2MW16BGB-701 IT

  • 厂商:

    MICRON(镁光)

  • 封装:

    VFBGA-54

  • 描述:

    IC PSRAM 32MBIT PARALLEL 54VFBGA

  • 数据手册
  • 价格&库存
MT45W2MW16BGB-701 IT 数据手册
32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM® 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.6V VCCQ • Page mode read access – 16-word page size – Interpage read access: 70ns – Intrapage read access: 20ns • Burst mode write access: continuous burst • Burst mode read access – 4, 8, or 16 words or continuous burst – MAX clock rate: 104 MHz (tCLK = 9.62ns) – Burst initial latency: 38.5ns (4 clocks) at 104 MHz – tACLK: 7ns at 104 MHz • Low power consumption – Asynchronous read:
MT45W2MW16BGB-701 IT 价格&库存

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MT45W2MW16BGB-701 IT
    •  国内价格
    • 1000+109.38400

    库存:10